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Freescale Semiconductor Technical Data
Document Number: MRF7S19080H Rev. 0, 1/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for TD - SCDMA and PCN - PCS/cellular radio applications. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 24 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain -- 18 dB Drain Efficiency -- 32% Device Output Signal PAR -- 6.2 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset -- - 38 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 80 Watts CW Peak Tuned Output Power * Pout @ 1 dB Compression Point w 80 Watts CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S19080HR3 MRF7S19080HSR3
1930 - 1990 MHz, 24 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465- 06, STYLE 1 NI - 780 MRF7S19080HR3
CASE 465A - 06, STYLE 1 NI - 780S MRF7S19080HSR3
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(1,2)
Symbol VDSS VGS VDD Tstg TC TJ
Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225
Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 81C, 79 W CW Case Temperature 79C, 24 W CW Symbol RJC Value (2,3) 0.60 0.69 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2007. All rights reserved.
MRF7S19080HR3 MRF7S19080HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 174 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 750 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.74 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss Coss -- -- 0.64 297 -- -- pF pF VGS(th) VGS(Q) VDS(on) 1.2 2 0.1 2 2.7 0.21 2.7 3.8 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 750 mA, Pout = 24 W Avg., f = 1932.5 MHz and f = 1987.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. (continued) Gps D PAR ACPR IRL 17 30 5.7 -- -- 18 32 6.2 - 38 - 20 20 -- -- - 35 -9 dB % dB dBc dB
MRF7S19080HR3 MRF7S19080HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Video Bandwidth @ 80 W PEP Pout where IM3 = - 30 dBc (Tone Spacing from 100 kHz to VBW) IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Gain Flatness in 60 MHz Bandwidth @ Pout = 24 W Avg. Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 80 W CW Average Group Delay @ Pout = 80 W CW, f = 1960 MHz Part - to - Part Insertion Phase Variation @ Pout = 80 W CW, f = 1960 MHz, Six Sigma Window Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) Symbol VBW -- 90 -- Min Typ Max Unit MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 750 mA, 1930 - 1990 MHz Bandwidth
GF Delay G P1dB
-- -- -- -- -- --
0.165 1.14 2.25 22.3 0.009 0.017
-- -- -- -- -- --
dB ns dB/C dBm/C
MRF7S19080HR3 MRF7S19080HSR3 RF Device Data Freescale Semiconductor 3
R2 VBIAS + R1 C2 C3 C4 C5 Z7 Z9 Z6 Z10 Z12 C7 Z13 RF OUTPUT C6 Z8 C8 C9 C10 C11 C12 + C13 VSUPPLY
RF INPUT
Z3 Z1 C1 Z2 Z4
Z5
Z11 DUT
Z1 Z2 Z3 Z4 Z5 Z6 Z7
0.530 x 0.084 Microstrip 0.336 x 0.084 Microstrip 0.211 x 0.180 x 0.084 Taper 0.704 x 0.216 Microstrip 0.220 x 0.216 x 0.084 Taper 0.504 x 0.800 x 0.084 Taper 0.265 x 0.313 x 0.332 x 0.040 Taper
Z8 Z9 Z10 Z11 Z12 Z13 PCB
0.306 x 0.388 x 0.090 Taper 0.880 x 0.201 x 0.795 Taper 0.415 x 0.084 Microstrip 0.191 x 0.243 x 0.084 Taper 0.510 x 0.084 Microstrip 0.525 x 0.084 Microstrip Arlon, GX - 0300 - 55 - 22, 0.030, r = 2.55
Figure 1. MRF7S19080HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S19080HR3(HSR3) Test Circuit Component Designations and Values
Part C1, C7 C2, C11 C3 C4 C5, C10 C6 C8 C9 C12 C13 R1 R2 Description 15 pF Chip Capacitors 13 pF Chip Capacitors 10 F Chip Capacitor 1000 pF Chip Capacitor 0.1 F Chip Capacitors 5.1 pF Chip Capacitor 6.8 pF Chip Capacitor 2.2 F Chip Capacitor 470 F, 63 V Electrolytic Capacitor 100 F, 50 V Electrolytic Capacitor 330 , 1/4 W Chip Resistor 10 , 1/4 W Chip Resistor Part Number ATC100B150JT500XT ATC100B130JT500XT GRM31MF51A106ZA01B ATC100B102JT50XT C1206C104K5RAC ATC100B5R1CT500XT ATC100B6R8CT500XT C1825C225J5RAC MCR63V477M13X26 MCR50V107M8X11 CRCW12063300FKTA CRCW120610R0FKTA Manufacturer ATC ATC TDK ATC Kemet ATC ATC Kemet Multicomp Multicomp Vishay Vishay
MRF7S19080HR3 MRF7S19080HSR3 4 RF Device Data Freescale Semiconductor
C12 R1 R2 C6 C8 C9
C13
C2 C3 C4
C5
C10
C11
C1 CUT OUT AREA
C7
HV7 2.1 GHz NI780 Rev. 1
Figure 2. MRF7S19080HR3(HSR3) Test Circuit Component Layout
MRF7S19080HR3 MRF7S19080HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
18 Gps, POWER GAIN (dB) 17 16 15 14 13 12 11 1880 PARC 1920 1960 IRL
Gps
36 D 34 32 30
-10 PARC (dB) -15 -20 -25 -30
-0.8 -1 -1.2 -1.4 2040
2000
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 24 Watts Avg.
D, DRAIN EFFICIENCY (%) -10 PARC (dB) -15 -20 -25 -30 562.5 mA 937.5 mA -60 -70 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 750 mA 19 18 Gps, POWER GAIN (dB) 17 16 15 14 IRL 13 12 11 1880 PARC 1920 1960 2000 2040 -2.8 -3 -3.2 2080 VDD = 28 Vdc, Pout = 49 W (Avg.) IDQ = 750 mA, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth PAR = 7.5 dB @ 0.01% Probability (CCDF) Gps 44 42 -2.6 D 50 48 46
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 49 Watts Avg.
20 19 Gps, POWER GAIN (dB) 18 17 16 15 14 IDQ = 1125 mA 937.5 mA 750 mA 562.5 mA 375 mA VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz Two -Tone Measurements, 10 MHz Tone Spacing IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -10 -20 -30 IDQ = 375 mA -40 -50 1125 mA VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz Two -Tone Measurements, 10 MHz Tone Spacing
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF7S19080HR3 MRF7S19080HSR3 6 RF Device Data Freescale Semiconductor
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
VDD = 28 Vdc, Pout = 24 W (Avg.) IDQ = 750 mA, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth PAR = 7.5 dB @ 0.01% Probability (CCDF)
D, DRAIN EFFICIENCY (%)
19
38
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
-10 -20 -30 -40 -50 -60 -70 1 10 Pout, OUTPUT POWER (WATTS) PEP 7th Order 100 400 3rd Order 5th Order VDD = 28 Vdc, IDQ = 750 mA f1 = 1955 MHz, f2 = 1965 MHz Two -Tone Measurements, 10 MHz Tone Spacing
0 -10 -20 IM3 -U -30 -40 -50 -60 1 10 TWO -TONE SPACING (MHz) 100 IM7 -U IM7 -L IM5 -U IM5 -L IM3 -L VDD = 28 Vdc, Pout = 80 W (PEP), IDQ = 750 mA Two -Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz
Figure 7. Intermodulation Distortion Products versus Output Power
1 OUTPUT COMPRESSION AT THE 0.01% PROBABILITY ON CCDF (dB) 0 -1 -1 dB = 23 W -2 -2 dB = 32.2 W -3
Figure 8. Intermodulation Distortion Products versus Tone Spacing
60 Ideal D, DRAIN EFFICIENCY (%) 55 50 45 40 -3 dB = 52.4 W Actual 35 30
-4 -5 10 20 30
VDD = 28 Vdc, IDQ = 750 mA f = 1960 MHz, Input PAR = 7.5 dB 40 50 60
Pout, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
ACPR, UPPER AND LOWER RESULTS (dBc) -20 VDD = 28 Vdc, IDQ = 750 mA, f = 1960 MHz Single -Carrier W-CDMA, PAR = 7.5 dB, ACPR @ 5 MHz Offset in 3.84 MHz Integrated Bandwidth Uncorrected, Upper and Lower DPD Corrected No Memory Correction 20 -30_C Gps, POWER GAIN (dB) 19 18 17 16 15 DPD Corrected, with Memory Correction 34 35 36 37 38 39 40 41 42 43 44 14 0.1 VDD = 28 Vdc IDQ = 750 mA f = 1960 MHz 1 10 Pout, OUTPUT POWER (WATTS) CW 100 Gps TC = -30_C 85_C 25_C 85_C 44 33 22 11 0 300 25_C 55 D, DRAIN EFFICIENCY (%) 66
-30
-40
-50
-60
D
-70
Pout, OUTPUT POWER (dBm)
Figure 10. Digital Predistortion Correction versus ACPR and Output Power
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
MRF7S19080HR3 MRF7S19080HSR3 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
19 IDQ = 750 mA f = 1960 MHz Gps, POWER GAIN (dB) 18 MTTF (HOURS) VDD = 24 V 15 0 50 100 150 Pout, OUTPUT POWER (WATTS) CW 28 V 32 V
109
108
17
107
16
106 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 24 W Avg., and D = 32%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators to access the MTTF calcu- lators by product.
Figure 12. Power Gain versus Output Power
Figure 13. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100 10
-10 -20 -30
3.84 MHz Channel BW
PROBABILITY (%)
1 0.1 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ "5 MHz Offset. PAR = 7.5 dB @ 0.01% Probability on CCDF 2 4 6 8 10 Compressed Output Signal @ 50 W Pout Input Signal
-40 -50 (dB) -60 -70 -80 -90 -100 -110 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW -ACPR in 3.84 MHz Integrated BW
PEAK -TO-AVERAGE (dB)
Figure 14. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal
Figure 15. Single - Carrier W - CDMA Spectrum
MRF7S19080HR3 MRF7S19080HSR3 8 RF Device Data Freescale Semiconductor
Zo = 10
f = 2040 MHz Zload f = 1880 MHz
f = 2040 MHz
Zsource f = 1880 MHz
VDD = 28 Vdc, IDQ = 750 mA, Pout = 24 W Avg. f MHz 1880 1900 1920 1940 1960 1980 2000 2020 2040 Zsource W 1.47 - j7.3 1.22 - j6.7 1.43 - j6.7 1.89 - j6.8 2.10 - j7.1 2.11 - j7.2 1.60 - j6.9 1.41 - j6.9 1.43 - j6.5 Zload W 2.10 - j5.4 1.96 - j5.0 2.06 - j4.9 2.27 - j5.1 2.45 - j5.1 2.38 - j5.0 2.08 - j4.9 1.84 - j4.9 1.89 - j4.6
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance MRF7S19080HR3 MRF7S19080HSR3 RF Device Data Freescale Semiconductor 9
TD - SCDMA CHARACTERIZATION
R2 VBIAS + R1 C2 C3 C4 C5 Z6 Z8 Z4 Z5 Z7 C6 Z9 Z10 Z11 Z12 Z14 C7 C8 C9 C10 C11 C12 + C13 RF Z15 OUTPUT VSUPPLY
RF INPUT
Z3 Z1 C1 Z2
Z13 DUT
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8
0.490 1.082 0.131 0.734 0.308 0.889 0.092 0.160
x 0.084 Microstrip x 0.084 Microstrip x 0.220 Microstrip x 0.084 Microstrip x 0.800 Microstrip x 0.040 Microstrip x 0.800 Microstrip x 0.880 Microstrip
Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB
0.432 x 0.121 Microstrip 0.327 x 0.974 Microstrip 0.505 x 0.201 Microstrip 0.220 x 0.084 Microstrip 0.191 x 0.243 Microstrip 0.781 x 0.084 Microstrip 0.500 x 0.084 Microstrip Arlon, GX - 0300 - 55 - 22, 0.030, r = 2.55
Figure 17. MRF7S19080HR3(HSR3) Test Circuit Schematic -- TD - SCDMA
Table 6. MRF7S19080HR3(HSR3) Test Circuit Component Designations and Values -- TD - SCDMA
Part C1, C7 C2, C11 C3 C4 C5, C10 C6 C8 C9 C12 C13 R1 R2 Description 15 pF Chip Capacitors 13 pF Chip Capacitors 10 F Chip Capacitor 1000 pF Chip Capacitor 0.1 F Chip Capacitors 5.1 pF Chip Capacitor 6.8 pF Chip Capacitor 2.2 F Chip Capacitor 470 F, 63 V Electrolytic Capacitor 100 F, 50 V Electrolytic Capacitor 330 , 1/4 W Chip Resistor 10 , 1/4 W Chip Resistor Part Number ATC100B150JT500XT ATC100B130JT500XT GRM31MF51A106ZA01B ATC100B102JT50XT C1206C104K5RAC ATC100B5R1CT500XT ATC100B6R8CT500XT C1825C225J5RAC MCR63V477M13X26 MCR50V107M8X11 CRCW12063300FKTA CRCW120610R0FKTA Manufacturer ATC ATC TDK ATC Kemet ATC ATC Kemet Multicomp Multicomp Vishay Vishay
MRF7S19080HR3 MRF7S19080HSR3 10 RF Device Data Freescale Semiconductor
C12 R1 R2 C6 C8 C9
C13
C2
C3 C4
C5
C10
C11
C1 CUT OUT AREA
C7
HV7 2.1 GHz NI780 Rev. 1
Figure 18. MRF7S19080HR3(HSR3) Test Circuit Component Layout -- TD - SCDMA
MRF7S19080HR3 MRF7S19080HSR3 RF Device Data Freescale Semiconductor 11
TYPICAL CHARACTERISTICS
-30 -35 ALT/ACPR (dBc) -40 -45 Alt-L -50 -55 Alt-U -60 0 1 2 3 4 5 6 7 8 9 Pout, OUTPUT POWER (WATTS) AVG. 0 8 4 3-Carrier TD-SCDMA VDD = 28 V, IDQ = 750 mA f = 2017.5 MHz Adj -U D Adj -L 24 20 16 12 D, DRAIN EFFICIENCY (%) D, DRAIN EFFICIENCY (%) 1.28 MHz Channel BW
Figure 19. 3 - Carrier TD - SCDMA ACPR, ALT and Drain Efficiency versus Output Power
-30 -45 -40 -45 Adj -L -50 -55 -60 0.5 Alt-L 8 4 0 1.5 2.5 3.5 4.5 5.5 6.5 7.5 Pout, OUTPUT POWER (WATTS) AVG. 6-Carrier TD-SCDMA VDD = 28 V, IDQ = 750 mA f = 2017.5 MHz Adj -U D 24 20 16 12
ALT/ACPR (dBc)
Alt-U
Figure 20. 6 - Carrier TD - SCDMA ACPR, ALT and Drain Efficiency versus Output Power
TD - SCDMA TEST SIGNAL
-30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -ALT1 in 1.28 MHz BW -1.6 MHz Offset 1.5 MHz f, FREQUENCY (MHz) +ALT1 in 1.28 MHz BW +1.6 MHz Offset Span 15 MHz -ALT2 in 1.28 MHz BW -3.2 MHz Offset +ALT2 in 1.28 MHz BW +3.2 MHz Offset (dBm) (dBm) 1.28 MHz Channel BW -30 VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz -40 -50 -60 -70 -80 -90 -100 -110 -120 -ALT1 in 1.28 MHz BW -1.6 MHz Offset 2.5 MHz f, FREQUENCY (MHz) +ALT1 in 1.28 MHz BW +1.6 MHz Offset Span 25 MHz -ALT2 in 1.28 MHz BW -3.2 MHz Offset +ALT2 in 1.28 MHz BW +3.2 MHz Offset VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz
-130 Center 2.0175 GHz
-130 Center 2.0175 GHz
Figure 21. 3 - Carrier TD - SCDMA Spectrum MRF7S19080HR3 MRF7S19080HSR3 12
Figure 22. 6 - Carrier TD - SCDMA Spectrum
RF Device Data Freescale Semiconductor
Zo = 10
Zload f = 1950 MHz f = 2070 MHz
f = 2070 MHz Zin
f = 1950 MHz
VDD = 28 Vdc, IDQ = 750 mA f MHz 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040 2050 2060 2070 Zin Zin W 1.87 - j6.10 1.94 - j6.25 1.77 - j6.04 1.52 - j5.47 1.46 - j4.92 1.49 - j4.62 1.53 - j4.64 1.50 - j4.85 1.50 - j5.15 1.62 - j5.56 1.63 - j5.90 1.47 - j5.86 1.38 - j5.40 Zload W 2.98 - j5.42 3.07 - j5.47 2.87 - j5.26 2.53 - j4.77 2.35 - j4.26 2.30 - j3.99 2.34 - j3.98 2.34 - j4.20 2.40 - j4.44 2.59 - j4.75 2.68 - j5.03 2.52 - j4.98 2.35 - j4.54
= Device input impedance as measured from gate to ground.
Zload = Test circuit impedance as measured from drain to ground.
Device Under Test
Output Matching Network
Z
in
Z
load
Figure 23. Series Equivalent Input and Load Impedance -- TD - SCDMA MRF7S19080HR3 MRF7S19080HSR3 RF Device Data Freescale Semiconductor 13
PACKAGE DIMENSIONS
B G
1
2X
Q bbb
M
TA
M
B
M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
3 (FLANGE)
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
CASE 465 - 06 ISSUE G NI - 780 MRF7S19080HR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
4X U (FLANGE)
B
1
4X Z (LID)
(FLANGE)
B
2
2X
K
D bbb
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
E A
(FLANGE)
A
CASE 465A - 06 ISSUE H NI - 780S MRF7S19080HSR3
MRF7S19080HR3 MRF7S19080HSR3 14
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Jan. 2007 Description
* Initial Release of Data Sheet
MRF7S19080HR3 MRF7S19080HSR3 RF Device Data Freescale Semiconductor 15
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MRF7S19080HR3 MRF7S19080HSR3
Rev. 16 0, 1/2007 Document Number: MRF7S19080H
RF Device Data Freescale Semiconductor

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